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24 April 2024

» arxiv » cond-mat/0305047

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Enhancement of Curie temperature in Ga(1-x)Mn(x)As/Ga(1-y)Al(y)As ferromagnetic heterostructures by Be modulation doping
T. Wojtowicz ; W.L. Lim ; X. Liu ; M. Dobrowolska ; J. K. Furdyna ; K. M. Yu ; W. Walukiewicz ; I. Vurgaftman ; J. R. Meyer ;
Date:	2 May 2003
Subject:	Materials Science \| cond-mat.mtrl-sci
Abstract:	The effect of modulation doping by Be on the ferromagnetic properties of Ga(1-x)Mn(x)As is investigated in Ga(1-x)Mn(x)As/Ga(1-y)Al(y)As heterojunctions and quantum wells. Introducing Be acceptors into the Ga(1-y)Al(y)As barriers leads to an increase of the Curie temperature T_C of Ga(1-x)Mn(x)As, from 70 K in undoped structures to over 100 K with the modulation doping. This increase is qualitatively consistent with a multi-band mean field theory simulation of carrier-mediated ferromagnetism. An important feature is that the increase of T_C occurs only in those structures where the modulation doping is introduced after the deposition of the magnetic layer, but not when the Be-doped layer is grown first. This behavior is expected from the strong sensitivity of Mn interstitial formation to the value of the Fermi energy during growth.
Source:	arXiv, cond-mat/0305047
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