| | |
| | |
Stat |
Members: 3643 Articles: 2'488'730 Articles rated: 2609
29 March 2024 |
|
| | | |
|
Article overview
| |
|
Precisely aligned graphene grown on hexagonal boron nitride by catalyst free chemical vapor deposition | Shujie Tang
; Haomin Wang
; Yu Zhang
; Ang Li
; Hong Xie
; Xiaoyu Liu
; Lianqing Liu
; Tianxin Li
; Fuqiang Huang
; Xiaoming Xie
; Mianheng Jiang
; | Date: |
1 Sep 2013 | Abstract: | To grow precisely aligned graphene on h-BN without metal catalyst is
extremely important, which allows for intriguing physical properties and
devices of graphene/h-BN hetero-structure to be studied in a controllable
manner. In this report, such hetero-structures were fabricated and investigated
by atomic resolution scanning probe microscopy. Moirre patterns are observed
and the sensitivity of moirre interferometry proves that the graphene grains
can align precisely with the underlying h-BN lattice within an error of less
than 0.05 degree. The occurrence of moirre pattern clearly indicates that the
graphene locks into h-BN via van der Waals epitaxy with its interfacial stress
greatly released. It is worthy to note that the edges of the graphene grains
are primarily oriented along the armchair direction. The field effect mobility
in such graphene flakes exceeds 20,000 cm2/V.s at ambient condition. This work
opens the door of atomic engineering of graphene on h-BN, and sheds light on
fundamental research as well as electronic applications based on graphene/h-BN
hetero-structure. | Source: | arXiv, 1309.0172 | Services: | Forum | Review | PDF | Favorites |
|
|
No review found.
Did you like this article?
Note: answers to reviews or questions about the article must be posted in the forum section.
Authors are not allowed to review their own article. They can use the forum section.
browser claudebot
|
| |
|
|
|
| News, job offers and information for researchers and scientists:
| |