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18 April 2024
 
  » arxiv » cond-mat/0305688

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Evolution of In-Plane Magnetic Anisotropy In Sputtered FeTaN/TaN/FeTaN Sandwich Films
H. B. Nie ; C. K. Ong ; J. P. Wang ; Z. W. Li ;
Date 29 May 2003
Journal JOURNAL OF APPLIED PHYSICS 93 (10): 7252-7254 Part 2 MAY 15 2003
Subject Materials Science | cond-mat.mtrl-sci
AbstractFeTaN/TaN/FeTaN sandwich films, FeTaN/TaN and TaN/FeTaN bilayers were synthesized by using RF magnetron sputtering. The magnetic properties, crystalline structures, microstructures and surface morphologies of the as-deposited samples were characterized using angle-resolved M-H loop tracer, VSM, XRD, TEM, AES and AFM. An evolution of the in-plane anisotropy was observed with the changing thickness of the nonmagnetic TaN interlayer in the FeTaN/TaN/FeTaN sandwiches, such as the easy-hard axis switching and the appearing of biaxial anisotropy. It is ascribed to three possible mechanisms, which are interlayer magnetic coupling, stress, and interface roughness, respectively. Interlayer coupling and stress anisotropies may be the major reasons to cause the easy-hard axis switching in the sandwiches. Whereas, magnetostatic and interface anisotropies may be the major reasons to cause biaxial anisotropy in the sandwiches, in which magnetostatic anisotropy is the dominant one.
Source arXiv, cond-mat/0305688
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