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Article overview
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Universal electric-field-driven resistive transition in narrow-gap Mott insulators | | Pablo Stoliar
; Laurent Cario
; Etienne Janod
; Benoit Corraze
; Catherine Guillot-Deudon
; Sabrina Salmon-Bourmand
; Vincent Guiot
; Julien Tranchant
; Marcelo Rozenberg
; | | Date: |
20 Sep 2013 | | Abstract: | One of today’s most exciting research frontier and challenge in condensed
matter physics is known as Mottronics, whose goal is to incorporate strong
correlation effects into the realm of electronics. In fact, taming the Mott
insulator-to-metal transition (IMT), which is driven by strong electronic
correlation effects, holds the promise of a commutation speed set by a quantum
transition, and with negligible power dissipation. In this context, one
possible route to control the Mott transition is to electrostatically dope the
systems using strong dielectrics, in FET-like devices. Another possibility is
through resistive switching, that is, to induce the insulator-to-metal
transition by strong electric pulsing. This action brings the correlated system
far from equilibrium, rendering the exact treatment of the problem a difficult
challenge. Here, we show that existing theoretical predictions of the
off-equilibrium manybody problem err by orders of magnitudes, when compared to
experiments that we performed on three prototypical narrow gap Mott systems
V2-xCrxO3, NiS2-xSex and GaTa4Se8, and which also demonstrate a striking
universality of this Mott resistive transition (MRT). We then introduce and
numerically study a model based on key theoretically known physical features of
the Mott phenomenon in the Hubbard model. We find that our model predictions
are in very good agreement with the observed universal MRT and with a
non-trivial timedelay electric pulsing experiment, which we also report. Our
study demonstrates that the MRT can be associated to a dynamically directed
avalanche. | | Source: | arXiv, 1309.5315 | | Services: | Forum | Review | PDF | Favorites | |
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