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Evolution of the fermi surface of a doped topological insulator with carrier concentration | | E. Lahoud
; E. Maniv
; M. Petrushevsky
; M. Naamneh
; A. Ribak
; S. Wiedmann
; L. Petaccia
; K.B. Chashka
; Y. Dagan
; A. Kanigel
; | | Date: |
1 Oct 2013 | | Abstract: | In an ideal bulk topological-insulator (TI) conducting surface states
protected by time reversal symmetry enfold an insulating crystal. However, the
archetypical TI, Bi2Se3, is actually never insulating; it is in fact a
relatively good metal. Nevertheless, it is the most studied system among all
the TIs, mainly due to its simple band-structure and large spin-orbit gap.
Recently it was shown that copper intercalated Bi2Se3 becomes superconducting
and it was suggested as a realization of a topological superconductor (TSC).
Here we use a combination of techniques that are sensitive to the shape of the
Fermi surface (FS): the Shubnikov-de Haas (SdH) effect and angle resolved
photoemission spectroscopy (ARPES) to study the evolution of the FS shape with
carrier concentration, n. We find that as n increases, the FS becomes 2D-like.
These results are of crucial importance for understanding the superconducting
properties of CuxBi2Se3. | | Source: | arXiv, 1310.1001 | | Services: | Forum | Review | PDF | Favorites | |
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