| | |
| | |
Stat |
Members: 3643 Articles: 2'488'730 Articles rated: 2609
29 March 2024 |
|
| | | |
|
Article overview
| |
|
Mn Interstitial Diffusion in (Ga,Mn)As | K.W. Edmonds
; P. Boguslawski
; K.Y. Wang
; R.P. Campion
; N.R.S. Farley
; B.L. Gallagher
; C.T. Foxon
; M. Sawicki
; T. Dietl
; M.B. Nardelli
; J. Bernholc
; | Date: |
7 Jul 2003 | Subject: | Materials Science | cond-mat.mtrl-sci | Abstract: | We present a combined theoretical and experimental study of the ferromagnetic semiconductor (Ga,Mn)As which explains the remarkably large changes observed on low temperature annealing. Careful control of the annealing conditions allows us to obtain samples with ferromagnetic transition temperatures up to 159 K. Ab initio calculations, and resistivity measurements during annealing, show that the observed changes are due to out-diffusion of Mn interstitials towards the surface, governed by an energy barrier of about 0.7-0.8 eV. The Mn interstitial is a double donor resulting in compensation of charge carriers and suppression of ferromagnetism. Electric fields induced by high concentrations of substitutional Mn acceptors have a significant effect on the diffusion. | Source: | arXiv, cond-mat/0307140 | Services: | Forum | Review | PDF | Favorites |
|
|
No review found.
Did you like this article?
Note: answers to reviews or questions about the article must be posted in the forum section.
Authors are not allowed to review their own article. They can use the forum section.
browser claudebot
|
| |
|
|
|
| News, job offers and information for researchers and scientists:
| |