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23 April 2024
 
  » arxiv » 1310.5194

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Crossover between Weak Antilocalization and Weak Localization of Bulk States in Ultrathin Bi2Se3 Films
Huichao Wang ; Cui-Zu Chang ; Haiwen Liu ; Huakun Zuo ; Yanfei Zhao ; Yi Sun ; Zhengcai Xia ; Ke He ; Xucun Ma ; X. C. Xie ; Qi-Kun Xue ; Jian Wang ;
Date 19 Oct 2013
AbstractWe systematically study the magneto-transport properties up to 50 Tesla of ultrathin topological insulator Bi2Se3 films grown via molecular beam epitaxy technique. In parallel magnetic field, interestingly, magneto-resistances of the films are closely related to the relative orientation of field and the excitation current. When the field is increased at the field perpendicular to the current configuration, a crossover between weak antilocalization and weak localization of the bulk states occurs at 4.2 K, while only weak localization shows up at 77 K. Thus the system also exhibits the crossover from weak antilocalization to weak localization as the temperature rises in relatively low magnetic field regime. When the field is parallel to the current, only weak antilocalization is observed at 4.2 K and 77 K, which may be due to the crossover appearing above 50 Tesla. As a smoking gun, our work directly shows the crossover from weak antilocalization to weak localization of the bulk states in the ultrathin topological insulator films.
Source arXiv, 1310.5194
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