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18 April 2024 |
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The Effect of Mn Interstitials on the Lattice Parameter of Ga(1-x)Mn(x)As | | I. Kuryliszyn-Kudelska
; J.Z. Domagala
; T. Wojtowicz
; X. Liu
; E. Lusakowska
; W. Dobrowolski
; J.K. Furdyna
; | | Date: |
18 Jul 2003 | | Subject: | cond-mat | | Abstract: | Structural investigation of as-grown as well as annealed Ga(1-x)Mn(x)As epilayers was carried out using high resolution X-ray diffraction (XRD) measurements for a wide range of Mn concentrations (0.027<=x<=0.083), with special attention on how the interstitial Mn atoms (Mn_I) influence the lattice parameter of this material. We observe a distinct decrease of the lattice parameter after low temperature annealing of Ga(1-x)Mn(x)As, which is known to reduce the Mn_I concentration. The reciprocal space maps measured for all the investigated samples showed that the Ga(1-x)Mn(x)As layers are fully strained - i.e., they remain pseudomorphic to the GaAs (001) substrate - for the entire thickness of the samples used (in the present case over 100 nm). In all cases studied the XRD measurements revealed high crystalline perfection of both as-grown as well as annealed Ga(1-x)Mn(x)As epilayers | | Source: | arXiv, cond-mat/0307467 | | Services: | Forum | Review | PDF | Favorites | |
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