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Room temperature domain wall pinning in bent ferromagnetic nanowires | | D. M. Silevitch
; M. Tanase
; C. L. Chien
; D. H. Reich
; | | Date: |
27 Aug 2003 | | Subject: | Materials Science | cond-mat.mtrl-sci | | Abstract: | Mechanically bent nickel nanowires show clear features in their room temperature magnetoresistance when a domain wall is pinned at the location of the bend. By varying the direction of an applied magnetic field, the wire can be prepared either in a single-domain state or a two-domain state. The presence or absence of the domain wall acts to shift the switching fields of the nanowire. In addition, a comparison of the magnetoresistance of the nanowire with and without a domain wall shows a shift in the resistance correlated with the presence of a wall. The resistance is decreased by 20-30 milli-Ohms when a wall is present, compared to an overall resistance of 40-60 Ohms. A model of the magnetization was developed that allowed calculation of the magnetostatic energy of the nanowires, giving an estimate for the nucleation energy of a domain wall. | | Source: | arXiv, cond-mat/0308579 | | Services: | Forum | Review | PDF | Favorites | |
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