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29 March 2024
 
  » arxiv » cond-mat/0309033

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Influence of defects on the lattice constant of GaMnAs
J. Sadowski ; J. Z. Domagala ;
Date 1 Sep 2003
Subject Materials Science | cond-mat.mtrl-sci
Affiliation1, 2), J. Z. Domagala ( Max-Lab, Lund University, Sweden, Institute of Physics, Polish Academy of Sciences, Warszawa, Poland
AbstractWe study the influence of main compensating defects: As antisites and Mn interstitials, known to occur in GaMnAs ferromagnetic semiconductor, on its structural properties. Our experimental results show that there is a balance between Mn interstitial and As antisite defects, leading to the reduced density of one type of defect upon increased density of another defect. The significant differences in the lattice parameters of GaMnAs with the different balance between these two types of defects were observed. The annealing induced reduction of GaMnAs lattice constant is inhibited in the samples with large density of As antisites.
Source arXiv, cond-mat/0309033
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