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Correlation between the structural and optical properties of spontaneously formed GaN nanowires: a quantitative evaluation of the impact of nanowire coalescence | | S. Fernández-Garrido
; V. M. Kaganer
; C. Hauswald
; B. Jenichen
; M. Ramsteiner
; V. Consonni
; L. Geelhaar
; O. Brandt
; | | Date: |
12 Sep 2014 | | Abstract: | We investigate the structural and optical properties of spontaneously formed
GaN nanowires with different degrees of coalescence. This quantity is
determined by an analysis of the cross-sectional area and perimeter of the
nanowires obtained by plan-view scanning electron microscopy. X-ray diffraction
experiments are used to measure the inhomogeneous strain in the nanowire
ensembles as well as the orientational distribution of the nanowires. The
comparison of the results obtained for GaN nanowire ensembles prepared on bare
Si(111) and AlN buffered 6H-SiC(000-1) reveals that the main source of the
inhomogeneous strain is the random distortions caused by the coalescence of
adjacent nanowires. The magnitude of the strain inhomogeneity induced by
nanowire coalescence is found not to be determined solely by the coalescence
degree, but also by the mutual misorientation of the coalesced nanowires. The
linewidth of the donor-bound exciton transition in photoluminescence spectra
does not exhibit a monotonic increase with the coalescence degree. In contrast,
the comparison of the root mean square strain with the linewidth of the
donor-bound exciton transition reveals a clear correlation: the higher the
strain inhomogeneity, the larger the linewidth. | | Source: | arXiv, 1409.3773 | | Services: | Forum | Review | PDF | Favorites | |
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