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Electron Spin Decoherence in Silicon Carbide Nuclear Spin Bath | | Li-Ping Yang
; Christian Burk
; Mattias Widmann
; Sang-Yun Lee
; Jörg Wrachtrup
; Nan Zhao
; | | Date: |
16 Sep 2014 | | Abstract: | In this paper, we study the electron spin decoherence of single defects in
silicon carbide (SiC) nuclear spin bath. We find that, although the natural
abundance of $^{29}
m{Si}$ ($p_{
m{Si}}=4.7\%$) is about 4 times larger than
that of $^{13}{
m C}$ ($p_{
m{C}}=1.1\%$), the electron spin coherence time
of defect centers in SiC nuclear spin bath in strong magnetic field
($B>300~
m{Gauss}$) is longer than that of nitrogen-vacancy (NV) centers in
$^{13}{
m C}$ nuclear spin bath in diamond. The reason for this
counter-intuitive result is the suppression of heteronuclear-spin flip-flop
process in finite magnetic field. Our results show that electron spin of defect
centers in SiC are excellent candidates for solid state spin qubit in quantum
information processing. | | Source: | arXiv, 1409.4646 | | Services: | Forum | Review | PDF | Favorites | |
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