|
| | | | |
| | | |
| Stat |
Members: 3645
Articles: 2'500'096
Articles rated: 2609
19 April 2024 |
|
| | | | |
|
Article overview
| |
|
|
New experimental evidence for the role of long-range potential fluctuations in the mechanism of 1/f noise in a-Si:H | | J. P. R. Bakker
; P. J. S. van Capel
; B. V. Fine
; J. I. Dijkhuis
; | | Date: |
20 Oct 2003 | | Journal: | J. Non-Cryst. Solids, v.338-340, p.310 (2004) | | Subject: | Disordered Systems and Neural Networks | cond-mat.dis-nn | | Abstract: | We present measurements of 1/f resistance noise in three different films of amorphous silicon (a-Si) in the presense of a transverse electric current. Two of these films have n-i-n sandwich structure - in one of them all three layers were hydrogenated; in the other one only the n-layers were hydrogenated, while the intrinsic layer was deuterated. The third film had p-i-p structure with all three layers hydrogenated. The experimental spectra were found to be in a very good quantitative agreement with theoretical predictions, which were based on the mechanism involving long-range fluctuations of the Coulomb potential created by charged defects (see cond-mat/0210680). | | Source: | arXiv, cond-mat/0310468 | | Services: | Forum | Review | PDF | Favorites | |
|
|
No review found.
Did you like this article?
Note: answers to reviews or questions about the article must be posted in the forum section.
Authors are not allowed to review their own article. They can use the forum section.
browser claudebot
|
| |
|
|
|
|
News, job offers and information for researchers and scientists:
| |
REGISTER