Science-advisor
REGISTER info/FAQ
Login
username
password
     
forgot password?
register here
 
Research articles
  search articles
  reviews guidelines
  reviews
  articles index
My Pages
my alerts
  my messages
  my reviews
  my favorites
 
 
Stat
Members: 3645
Articles: 2'504'928
Articles rated: 2609

26 April 2024
 
  » arxiv » 1410.2348

 Article overview



Electrical Characteristics of Superconducting-Ferromagnetic Transistors
Ivan P. Nevirkovets ; Oleksandr Chernyashevskyy ; Georgy V. Prokopenko ; Oleg A. Mukhanov ; John B. Ketterson ;
Date 9 Oct 2014
AbstractWe report experimental results on characteristics of SFIFS junctions and multi-terminal SFIFSIS devices (where S, I, and F denote a superconductor (Nb), an insulator (AlOx), and a ferromagnetic material (Ni), respectively). The SFIFS junctions serve as injectors in the SFIFSIS devices which have transistor-like properties; for this reason we call them Superconducting-Ferromagnetic Transistors (SFTs). We have found the F (Ni) thickness at which the SFIFS current-voltage characteristic (CVC) becomes linear. Furthermore, we investigated the DC and AC characteristics of SFTs of two types: ordinary devices with a single acceptor (SIS) junction, and devices with a double acceptor. In the first case, we focused on studying the influence of the injection current through the SFIFS junction on the maximum Josephson current of the SIS acceptor. For devices of the second type, we studied voltage amplification properties when the operating point was chosen in the sub-gap region of the acceptor CVC. By applying an AC signal (in the kHz range) while biasing the injector (SFIFS) junction with a constant DC current, we observed a voltage gain above 25 on the double acceptor. In the reverse transmission experiment, we applied DC current and an AC modulation to the acceptor junction and, within the accuracy of the experiment, observed no response on the injector junction, which implies an excellent input-output isolation in our SFIFSIS devices. The experiments indicate that, after optimization of the device parameters, they can be used as input/output isolators and amplifiers for memory, digital, and RF applications.
Source arXiv, 1410.2348
Services Forum | Review | PDF | Favorites   
 
Visitor rating: did you like this article? no 1   2   3   4   5   yes

No review found.
 Did you like this article?

This article or document is ...
important:
of broad interest:
readable:
new:
correct:
Global appreciation:

  Note: answers to reviews or questions about the article must be posted in the forum section.
Authors are not allowed to review their own article. They can use the forum section.

browser Mozilla/5.0 AppleWebKit/537.36 (KHTML, like Gecko; compatible; ClaudeBot/1.0; +claudebot@anthropic.com)






ScienXe.org
» my Online CV
» Free


News, job offers and information for researchers and scientists:
home  |  contact  |  terms of use  |  sitemap
Copyright © 2005-2024 - Scimetrica