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29 March 2024 |
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Competing magnetic states, disorder, and the magnetic character of Fe3Ga4 | J. H. Mendez
; C. E. Ekuma
; Y. Wu
; B. W. Fulfer
; J. C. Prestigiacomo
; W. A. Shelton
; M. Jarrell
; J. Moreno
; D. P. Young
; P. W. Adams
; A. Karki
; R. Jin
; Julia Y. Chan
; J. F. DiTusa
; | Date: |
9 Oct 2014 | Abstract: | The physical properties of metamagnetic Fe$_3$Ga$_4$ single crystals are
investigated to explore the sensitivity of the magnetic states to temperature,
magnetic field, and sample history. Our data reveal a moderate anisotropy in
the magnetization and the metamagnetic critical field along with features in
the specific heat at the magnetic transitions $T_1=68$ K and $T_2=360$ K. Both
$T_1$ and $T_2$ are found to be sensitive to the annealing conditions of our
crystals suggesting that disorder affects the competition between the
ferromagnetic (FM) and antiferromagnetic (AFM) states. Resistivity measurements
reveal metallic transport with a sharp anomaly associated with the transition
from AFM-to-FM response just above room temperature. The Hall effect is
dominated by the anomalous contribution which rivals that of magnetic
semiconductors in magnitude ($-5 mu Omega$ cm at 2 T and 350 K) and undergoes
a change of sign upon cooling into the low temperature FM state. The
temperature and field dependence of the Hall effect indicate that the magnetism
is likely to be highly itinerant in character and that a significant change in
the electronic structure accompanies the magnetic transitions. We observe a
contribution from the topological Hall effect in the AFM phase suggesting a
non-coplanar contribution to the magnetism. Electronic structure calculations
predict an AFM ground state with a wavevector parallel to the crystallographic
$c$-axis preferred over the experimentally measured FM state by $approx$ 50
meV per unit cell. However, supercell calculations with a small density of
Fe-antisite defects introduced tend to stabilize the FM over the AFM state
indicating that antisite defects may be the cause of the sensitivity to sample
synthesis conditions. | Source: | arXiv, 1410.2538 | Services: | Forum | Review | PDF | Favorites |
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