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Electrical and THz magnetospectroscopy studies of laser-patterned micro- and nanostructures on InAs-based heterostructures | | Olivio Chiatti
; Sven S. Buchholz
; Christian Heyn
; Wolfgang Hansen
; Mehdi Pakmehr
; Bruce D. McCombe
; Saskia F. Fischer
; | | Date: |
31 Oct 2014 | | Abstract: | Nanostructures fabricated from narrow-gap semiconductors with strong
spin-orbit interaction (SOI), such as InAs, can be used to filter momentum
modes of electrons and offer the possibility to create and detect
spin-polarized currents entirely by electric fields. Here, we present
magnetotransport and THz magnetospectroscopy investigations of Hall-bars with
back-gates made from in InGaAs/InAlAs quantum well structures with a strained 4
nm InAs inserted channel. The two-dimensional electron gas is at 53 nm depth
and has a carrier density of about $6 imes10^{11}$ cm$^{-2}$ and mobility of
about $2 imes10^{5}$ cm$^2$/Vs, after illumination. Electrical and THz optical
transport measurements at low temperatures and in high magnetic fields reveal
an effective mass of 0.038$m_{0}$ and an anisotropic $g$-factor of up to 20,
larger than for bulk InAs or InAs-based heterostructures. We demonstrate that
quasi-one-dimensional channels can be successfully formed by micro-laser
lithography. The population of subbands is controlled by in-plane gates.
Contrary to previous reports symmetric and asymmetric in-plane gate voltages
applied to quasi-one dimensional channels did not show indications of
SOI-induced anomalies in the conductance. | | Source: | arXiv, 1410.8588 | | Services: | Forum | Review | PDF | Favorites | |
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