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28 March 2024
 
  » arxiv » 1411.7840

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Interplay between Raman shift and thermal expansion in graphene: temperature-dependent measurements and analysis of substrate corrections
S. Linas ; Y. Magnin ; B. Poinsot ; O. Boisron ; G. D. Forster ; Z. Han ; D. Kalita ; V. Bouchiat ; V. Martinez ; R. Fulcrand ; F. Tournus ; V. Dupuis ; F. Rabilloud ; L. Bardotti ; F. Calvo ;
Date 28 Nov 2014
AbstractMeasurements and calculations have shown significant disagreement regarding the sign and variations of the thermal expansion coefficient (TEC) of graphene $alpha(T)$. Here we report dedicated Raman scattering experiments conducted for graphene monolayers deposited on silicon nitride substrates and over the broad temperature range 150--900~K. The relation between those measurements for the G band and the graphene TEC, which involves correcting the measured signal for the mismatch contribution of the substrate, is analyzed based on various theoretical candidates for $alpha(T)$. Contrary to calculations in the quasiharmonic approximation, a many-body potential reparametrized for graphene correctly reproduces experimental data. These results indicate that the TEC is more likely to be positive above room temperature.
Source arXiv, 1411.7840
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