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Current noise in diffusive SNS junctions in the incoherent MAR regime (a review) | | E.V. Bezuglyi
; E.N. Bratus'
; V.S. Shumeiko
; G. Wendin
; | | Date: |
2 Dec 2014 | | Abstract: | We present a theory for the current shot noise in long diffusive SNS
structures with low-resistive interfaces at arbitrary temperatures. In such
structures, the noise is mostly generated by normal electron scattering in the
N-region. Whereas the $I$-$V$ characteristics are approximately described by
Ohm’s law, the current noise reveals all characteristic features of the MAR
regime: "giant" enhancement at low voltages, pronounced SGS, and excess noise
at large voltages. The most spectacular feature of the noise in the incoherent
MAR regime is a universal finite noise level at zero voltage and at zero
temperature, $S= 4Delta/3R$. This effect can be understood as the result of
the enhancement of the effective charge of the carriers, $q^{it
eff}=2Delta/V$, or, alternatively, as the effect of strongly non-equilibrium
quasiparticle population in the energy gap region with the effective
temperature $T_0=Delta/3$. Under the condition of dominant electron-electron
scattering, the junction undergoes crossover to the hot electron regime, with
the effective temperature of the subgap electrons decreasing logarithmically
with the voltage. Calculation of the noise power has been done on the basis of
circuit theory of the incoherent MAR. | | Source: | arXiv, 1412.0989 | | Services: | Forum | Review | PDF | Favorites | |
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