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24 April 2024 |
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Extreme mobility enhancement of two-dimensional electron gases at oxide interfaces via charge transfer induced modulation doping | | Y. Z. Chen
; F. Trier
; T. Wijnands
; R. J. Green
; N. Gauquelin
; R. Egoavil
; D. V. Christensen
; G. Koster
; M. Huijben
; N. Bovet
; S. Macke
; F. He
; R. Sutarto
; N. H. Andersen
; G. E. D. K. Prawiroatmodjo
; T. S. Jespersen
; J. A. Sulpizio
; M. Honig
; S. Linderoth
; S. Ilani
; J. Verbeeck
; G. Van Tendeloo
; G. Rijnders
; G. A. Sawatzky
; N. Pryds
; | | Date: |
22 Apr 2015 | | Abstract: | The discovery of two-dimensional electron gases (2DEGs) at the interface
between two insulating complex oxides, such as LaAlO3 (LAO) or gamma-Al2O3
(GAO) epitaxially grown on SrTiO3 (STO) 1,2, provides an opportunity for
developing all-oxide electronic devices3,4. These 2DEGs at complex oxide
interfaces involve many-body interactions and give rise to a rich set of
phenomena5, for example, superconductivity6, magnetism7,8, tunable
metal-insulator transitions9, and phase separation10. However, large
enhancement of the interfacial electron mobility remains a major and
long-standing challenge for fundamental as well as applied research of complex
oxides11-15. Here, we inserted a single unit cell insulating layer of polar
La1-xSrxMnO3 (x=0, 1/8, and 1/3) at the interface between disordered LaAlO3 and
crystalline SrTiO3 created at room temperature. We find that the electron
mobility of the interfacial 2DEG is enhanced by more than two orders of
magnitude. Our in-situ and resonant x-ray spectroscopic in addition to
transmission electron microscopy results indicate that the manganite layer
undergoes unambiguous electronic reconstruction and leads to modulation doping
of such atomically engineered complex oxide heterointerfaces. At low
temperatures, the modulation-doped 2DEG exhibits clear Shubnikov-de Haas
oscillations and the initial manifestation of the quantum Hall effect,
demonstrating an unprecedented high-mobility and low electron density oxide
2DEG system. These findings open new avenues for oxide electronics. | | Source: | arXiv, 1504.5986 | | Services: | Forum | Review | PDF | Favorites | |
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