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25 April 2024

» arxiv » 1510.6524

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Room-temperature operation of Si spin MOSFET with high on/off spin signal ratio
Takayuki Tahara ; Hayato Koike ; Makoto Kameno ; Yuichiro Ando ; Kazuhito Tanaka ; Shinji Miwa ; Yoshishige Suzuki ; Masashi Shiraishi ;
Date:	22 Oct 2015
Abstract:	We experimentally demonstrate a Si spin metal-oxide-semiconductor field-effect transistor (MOSFET) that exhibits a high on/off ratio of source-drain current and spin signals at room temperature. The spin channel is non-degenerate n-type Si, and an effective application of gate voltage in the back-gated structure allows the spin MOSFET operation. This achievement can pave the way to practical use of the Si spin MOSFET.
Source:	arXiv, 1510.6524
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