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20 April 2024

» arxiv » 1601.0759

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Observation of large spin accumulation voltages in non-degenerate Si spin devices due to spin drift effect: Experiments and theory
Takayuki Tahara ; Yuichiro Ando ; Makoto Kameno ; Hayato Koike ; Kazuhito Tanaka ; Shinji Miwa ; Yoshishige Suzuki ; Tomoyuki Sasaki ; Tohru Oikawa ; Masashi Shiraishi ;
Date:	5 Jan 2016
Abstract:	A large spin-accumulation voltage of more than 1.5 mV at 1 mA, i.e., a magnetoresistance of 1.5 {Omega}, was measured by means of the local three-terminal magnetoresistance in nondegenerate Si-based lateral spin valves (LSVs) at room temperature. This is the largest spin-accumulation voltage measured in semiconductor-based LSVs. The modified spin drift-diffusion model, which successfully accounts for the spin drift effect, explains the large spin-accumulation voltage and significant bias-current-polarity dependence. The model also shows that the spin drift effect enhances the spin-dependent magnetoresistance in the electric two terminal scheme. This finding provides a useful guiding principle for spin metal-oxide semiconductor field-effect transistor (MOSFET) operations.
Source:	arXiv, 1601.0759
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