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23 April 2024 |
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Article overview
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Crystal-phase quantum dots in GaN quantum wires | P. Corfdir
; C. Hauswald
; O. Marquardt
; T. Flissikowski
; J. K. Zettler
; S. Fernández-Garrido
; L. Geelhaar
; H. T. Grahn
; O. Brandt
; | Date: |
6 Jan 2016 | Abstract: | We study the nature of excitons bound to I1 basal plane stacking faults in
ensembles of ultrathin GaN nanowires by continuous-wave and time-resolved
photoluminescence spectroscopy. These ultrathin nanowires, obtained by the
thermal decomposition of spontaneously formed GaN nanowire ensembles, are
tapered and have tip diameters down to 6 nm. With decreasing nanowire diameter,
we observe a strong blue shift of the transition originating from the radiative
decay of stacking fault-bound excitons. Moreover, the radiative lifetime of
this transition in the ultrathin nanowires is independent of temperature up to
60 K and significantly longer than that of the corresponding transition in
as-grown nanowires. These findings reveal a zero-dimensional character of the
confined exciton state and thus demonstrate that I1 stacking faults in
ultrathin nanowires act as genuine quantum dots. | Source: | arXiv, 1601.1162 | Services: | Forum | Review | PDF | Favorites |
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