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20 April 2024 |
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Electronic Evidence of Temperature-Induced Lifshitz Transition and Topological Nature in ZrTe5 | | Yan Zhang
; Chenlu Wang
; Li Yu
; Guodong Liu
; Aiji Liang
; Jianwei Huang
; Simin Nie
; Yuxiao Zhang
; Bing Shen
; Jing Liu
; Hongming Weng
; Lingxiao Zhao
; Genfu Chen
; Xiaowen Jia
; Cheng Hu
; Ying Ding
; Shaolong He
; Lin Zhao
; Fengfeng Zhang
; Shenjin Zhang
; Feng Yang
; Zhimin Wang
; Qinjun Peng
; Xi Dai
; Zhong Fang
; Zuyan Xu
; Chuangtian Chen
; X. J. Zhou
; | | Date: |
11 Feb 2016 | | Abstract: | The topological materials have attracted much attention recently. While
three-dimensional topological insulators are becoming abundant, two-dimensional
topological insulators remain rare, particularly in natural materials. ZrTe5
has host a long-standing puzzle on its anomalous transport properties; its
underlying origin remains elusive. Lately, ZrTe5 has ignited renewed interest
because it is predicted that single-layer ZrTe5 is a two-dimensional
topological insulator and there is possibly a topological phase transition in
bulk ZrTe5. However, the topological nature of ZrTe5 is under debate as some
experiments point to its being a three-dimensional or quasi-two-dimensional
Dirac semimetal. Here we report high-resolution laser-based angle-resolved
photoemission measurements on ZrTe5. The electronic property of ZrTe5 is
dominated by two branches of nearly-linear-dispersion bands at the Brillouin
zone center. These two bands are separated by an energy gap that decreases with
decreasing temperature but persists down to the lowest temperature we measured
(~2 K). The overall electronic structure exhibits a dramatic temperature
dependence; it evolves from a p-type semimetal with a hole-like Fermi pocket at
high temperature, to a semiconductor around ~135 K where its resistivity
exhibits a peak, to an n-type semimetal with an electron-like Fermi pocket at
low temperature. These results indicate a clear electronic evidence of the
temperature-induced Lifshitz transition in ZrTe5. They provide a natural
understanding on the underlying origin of the resistivity anomaly at ~135 K and
its associated reversal of the charge carrier type. Our observations also
provide key information on deciphering the topological nature of ZrTe5 and
possible temperature-induced topological phase transition. | | Source: | arXiv, 1602.3576 | | Services: | Forum | Review | PDF | Favorites | |
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