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25 September 2022
  » arxiv » 1604.8185

 Article overview

Resonant TMR inversion in LiF/EuS based spin filter tunnel junctions
Fen Liu ; Yihang Yang ; Qian Xue ; Zhiwei Gao ; Aixi Chen ; Guo-Xing Miao ;
Date 27 Apr 2016
AbstractResonant tunneling can lead to inverse tunnel magnetoresistance when impurity levels rather than direct tunneling dominate the transport process. We fabricated hybrid magnetic tunnel junctions of CoFe/LiF/EuS/Ti, with an epitaxial LiF energy barrier joined with a polycrystalline EuS spin-filter bar-rier. Due to the water solubility of LiF, the devices were fully packaged in situ. The devices showed sizeable positive TMR up to 16% at low bias voltages but clearly inverted TMR at higher bias voltages. The TMR inversion depends sensitively on the thickness of LiF, and the tendency of inversion disap-pears when LiF gets thick enough and recovers its intrinsic properties.
Source arXiv, 1604.8185
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