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29 March 2024
 
  » arxiv » cond-mat/9608101

 Article overview


Electric field scaling at a B=0 metal-insulator transition in two dimensions
S. V. Kravchenko ; D. Simonian ; M. P. Sarachik ; Whitney Mason ; J. E. Furneaux ;
Date 22 Aug 1996
Subject cond-mat
AbstractThe non-linear (electric field-dependent) resistivity of the 2D electron system in silicon exhibits scaling as a function of electric field and electron density in both the metallic and insulating phases, providing further evidence for a true metal-insulator transition in this 2D system at B=0. Comparison with the temperature scaling yields separate determinations of the correlation length exponent, u=1.5, and the dynamical exponent, z=0.8, close to the theoretical value z=1.
Source arXiv, cond-mat/9608101
Other source [GID 174176] pmid10062672
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