| | |
| | |
Stat |
Members: 3645 Articles: 2'501'711 Articles rated: 2609
19 April 2024 |
|
| | | |
|
Article overview
| |
|
AlN-buffered superconducting NbN nanowire single-photon detector on GaAs | E. Schmidt
; K. Ilin
; M. Siegel
; | Date: |
30 Sep 2016 | Abstract: | We investigated the suitability of AlN as a buffer layer for NbN
superconducting nanowire single-photon detectors (SNSPDs) on GaAs. The NbN
films with a thickness of 3.3 nm to 20 nm deposited onto GaAs substrates with
AlN buffer layer, demonstrate a higher critical temperature, critical current
density and lower residual resistivity in comparison to films deposited onto
bare substrates. Unfortunately, the thermal coupling of the NbN film to the
substrate weakens.
SNSPDs made of 4.9 nm thick NbN films on buffered substrates (in comparison
to detectors made from NbN films on bare GaAs) demonstrate three orders of
magnitude lower dark count rates and about ten times higher detection
efficiency at 900 nm being measured at 90% of the critical current. The system
timing jitter of SNSPDs on buffered substrates is reduced by 36 ps to 72 ps.
However, a weaker thermal coupling of NbN nanowire to the buffered substrate
leads to a latching effect at bias currents > 0.97 IC. | Source: | arXiv, 1609.9694 | Services: | Forum | Review | PDF | Favorites |
|
|
No review found.
Did you like this article?
Note: answers to reviews or questions about the article must be posted in the forum section.
Authors are not allowed to review their own article. They can use the forum section.
browser Mozilla/5.0 AppleWebKit/537.36 (KHTML, like Gecko; compatible; ClaudeBot/1.0; +claudebot@anthropic.com)
|
| |
|
|
|
| News, job offers and information for researchers and scientists:
| |