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05 December 2021
  » arxiv » 1610.7792

 Article overview

Interlayer current near the edge of an InAs/GaSb double quantum well in proximity with a superconductor
A. Kononov ; S.V. Egorov ; N. Titova ; B.R. Semyagin ; V.V. Preobrazhenskii ; M.A. Putyato ; E.A. Emelyanov ; E.V. Deviatov ;
Date 25 Oct 2016
AbstractWe investigate charge transport through the junction between a niobium superconductor and the edge of a two-dimensional electron-hole bilayer, realized in an InAs/GaSb double quantum well. For the transparent interface with a superconductor, we demonstrate that the junction resistance is determined by the interlayer charge transfer near the interface. From an analysis of experimental $I-V$ curves we conclude that the proximity induced superconductivity efficiently couples electron and hole layers at low currents. The critical current demonstrates periodic dependence on the in-plane magnetic field, while it is monotonous for the field which is normal to the bilayer plane.
Source arXiv, 1610.7792
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