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Article overview
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Interfacial-state coupling induced topological phase transitions in SnTe (110) thin film | Xiao Li
; Qian Niu
; | Date: |
10 Nov 2016 | Abstract: | A defining feature of topological insulating phases is symmetry-protected
interfacial Dirac states. SnTe is a representative topological crystalline
insulator, of which (110) thin films have two symmetry-unrelated valleys of
interfacial states. With the help of valley-contrasting couplings of
interfacial states, we design various two-dimensional topological phases in
(110) SnTe thin film systems. Our first-principles calculations demonstrate
that surface-state coupling strengths of two valleys independently vary with
the thickness of the thin film, leading to both two-dimensional topological
crystalline insulator and quantum spin Hall insulator. Most interestingly, by
constructing a nanoribbon array of SnTe thin film, edge-state couplings of
nanoribbons can further induce topological phase transition between the above
topological phases with high tunability, which offers multi-mode quantum
transport with potential use in electronic and spintronic devices. | Source: | arXiv, 1611.3151 | Services: | Forum | Review | PDF | Favorites |
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