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24 April 2024 |
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Direct imaging of electron transfer and its influence on superconducting pairing at FeSe/SrTiO3 interface | | Weiwei Zhao
; Mingda Li
; Cui-Zu Chang
; Jue Jiang
; Lijun Wu
; Chaoxing Liu
; Yimei Zhu
; Jagadeesh S. Moodera
; Moses H. W. Chan
; | | Date: |
13 Jan 2017 | | Abstract: | The exact mechanism responsible for the tenfold enhancement of
superconducting transition temperature (Tc) in a monolayer iron selenide (FeSe)
on SrTiO3(STO) substrate over that of bulk FeSe, is an open issue. We present
here a coordinated study of electrical transport and low temperature electron
energy-loss spectroscopy (EELS) measurements on FeSe/STO films of various
thicknesses. Our EELS mapping across the FeSe/STO interface shows direct
evidence of band-bending caused by electrons transferred from STO to FeSe
layer. The transferred electrons were found to accumulate only within the first
two atomic layers of FeSe films near the STO substrate. Our transport results
found a positive backgate applied from STO is particularly effective in
enhancing Tc of the films while minimally changing the carrier density. We
suggest that the positive backgate tends to ’pull’ the transferred electrons in
FeSe films closer to the interface and thus further enhances both their
coupling to interfacial phonons and the electron-electron interaction within
FeSe films, thus leading to a huge enhancement of Tc in FeSe films. | | Source: | arXiv, 1701.3678 | | Services: | Forum | Review | PDF | Favorites | |
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