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28 March 2024
 
  » arxiv » 1701.8041

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Strain-modulated Bandgap and Piezo-resistive Effect in Black Phosphorus Field-effect Transistors
Zuocheng Zhang ; Likai Li ; Jason Horng ; Nai Zhou Wang ; Fangyuan Yang ; Yijun Yu ; Yu Zhang ; Guorui Chen ; Kenji Watanabe ; Takashi Taniguchi ; Xian Hui Chen ; Feng Wang ; Yuanbo Zhang ;
Date 27 Jan 2017
AbstractEnergy bandgap largely determines the optical and electronic properties of a semiconductor. Variable bandgap therefore makes versatile functionality possible in a single material. In layered material black phosphorus, the bandgap can be modulated by the number of layers; as a result, few-layer black phosphorus has discrete bandgap values that are relevant for opto-electronic applications in the spectral range from red, in monolayer, to mid-infrared in the bulk limit. Here, we further demonstrate continuous bandgap modulation by mechanical strain applied through flexible substrates. The strain-modulated bandgap significantly alters the charge transport in black phosphorus at room temperature; we for the first time observe a large piezo-resistive effect in black phosphorus field-effect transistors (FETs). The effect opens up opportunities for future development of electro-mechanical transducers based on black phosphorus, and we demonstrate strain gauges constructed from black phosphorus thin crystals.
Source arXiv, 1701.8041
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