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28 March 2024
 
  » arxiv » 1703.4279

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High quality atomically thin PtSe2 films grown by molecular beam epitaxy
Mingzhe Yan ; Eryin Wang ; Xue Zhou ; Guangqi Zhang ; Hongyun Zhang ; Kenan Zhang ; Wei Yao ; Shuzhen Yang ; Koji Miyamoto ; Taichi Okuda ; Yang Wu ; Pu Yu ; Wenhui Duan ; Shuyun Zhou ;
Date 13 Mar 2017
AbstractAtomically thin PtSe2 films have attracted extensive research interests for potential applications in high-speed electronics, spintronics and photodetectors. Obtaining high quality, single crystalline thin films with large size is critical. Here we report the first successful layer-by-layer growth of high quality PtSe2 films by molecular beam epitaxy. Atomically thin films from 1 ML to 22 ML have been grown and characterized by low-energy electron diffraction, Raman spectroscopy and X-ray photoemission spectroscopy. Moreover, a systematic thickness dependent study of the electronic structure is revealed by angle-resolved photoemission spectroscopy (ARPES), and helical spin texture is revealed by spin-ARPES. Our work provides new opportunities for growing large size single crystalline films for investigating the physical properties and potential applications of PtSe2.
Source arXiv, 1703.4279
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