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29 March 2024 |
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Article overview
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Compact Graphene Plasmonic Slot Photodetector on Silicon-on-insulator with High Responsivity | Zhizhen Ma
; Kazuya Kikunage
; Hao Wang
; Shuai Sun
; Rubab Amin
; Mohammad Tahersima
; Rishi Maiti
; Mario Miscuglio
; Hamed Dalir
; Volker J. Sorger
; | Date: |
14 Nov 2018 | Abstract: | Graphene has extraordinary electro-optic properties and is therefore a
promising candidate for monolithic photonic devices such as photodetectors.
However, the integration of this atom-thin layer material with bulky photonic
components usually results in a weak light-graphene interaction leading to
large device lengths limiting electro-optic performance. In contrast, here we
demonstrate a plasmonic slot graphene photodetector on silicon-on-insulator
platform with high-responsivity given the 5 um-short device length. We observe
that the maximum photocurrent, and hence the highest responsivity, scales
inversely with the slot gap width. Using a dual-lithography step, we realize 15
nm narrow slots that show a 15-times higher responsivity per unit device-length
compared to photonic graphene photodetectors. Furthermore, we reveal that the
back-gated electrostatics is overshadowed by channel-doping contributions
induced by the contacts of this ultra-short channel graphene photodetector.
This leads to quasi charge neutrality, which explains both the
previously-unseen offset between the maximum photovoltaic-based photocurrent
relative to graphenes Dirac point and the observed non-ambipolar transport.
Such micrometer compact and absorption-efficient photodetectors allow for
short-carrier pathways in next-generation photonic components, while being an
ideal testbed to study short-channel carrier physics in graphene
optoelectronics. | Source: | arXiv, 1812.0894 | Services: | Forum | Review | PDF | Favorites |
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