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25 September 2022
 
  » arxiv » 1811.4242

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Atomic process of oxidative etching in monolayer molybdenum disulfide
Danhui Lv ; Hulian Wang ; Dancheng Zhu ; Jie Lin ; Guoli Yin ; Fang Lin ; Ze Zhang ; Chuanhong Jin ;
Date Sat, 10 Nov 2018 12:21:21 GMT (1805kb)
AbstractThe microscopic process of oxidative etching of two-dimensional molybdenum disulfide (2D MoS2) at an atomic scale is investigated using a correlative TEM-etching study. MoS2 flakes on graphene TEM grids are precisely tracked and characterized by TEM before and after the oxidative etching. This allows us to determine the structural change with an atomic resolution on the edges of the domains, of well-oriented triangular pits and along the grain boundaries. We observe that the etching mostly starts from the open edges, grain boundaries and pre-existing atomic defects. A zigzag Mo edge is assigned as the dominant termination of the triangular pits, and profound terraces and grooves are observed on the etched edges. Based on the statistical TEM analysis, we reveal possible routes for the kinetics of the oxidative etching in 2D MoS2, which should also be applicable for other 2D transition metal dichalcogenide materials like MoSe2 and WS2.
Source arXiv, 1811.4242
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