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25 April 2024 |
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Article overview
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Parylene Based Memristive Devices with Multilevel Resistive Switching for Neuromorphic Applications | | Anton A. Minnekhanov
; Andrey V. Emelyanov
; Dmitry A. Lapkin
; Kristina E. Nikiruy
; Boris S. Shvetsov
; Alexander A. Nesmelov
; Vladimir V. Rylkov
; Vyacheslav A. Demin
; | | Date: |
24 Jan 2019 | | Abstract: | In this paper, the resistive switching and neuromorphic behavior of
memristive devices based on parylene, a biocompatible and low-cost polymer, is
comprehensively studied. The Metal/Parylene/ITO sandwich structures were
prepared by means of the standard gas phase surface polymerization method with
different top active metal electrodes (Ag, Al, Cu or Ti of ~ 500 nm thickness).
These organic memristive devices exhibit excellent performance: low switching
voltage (down to 1 V), large OFF/ON resistance ratio (~ 10^3), retention
(greater than 10^4 s) and high multilevel resistance switching (at least 16
stable resistive states in the case of Cu electrodes). We have experimentally
shown that parylene-based memristive elements can be trained by a biologically
inspired spike-timing-dependent plasticity (STDP) mechanism. The obtained
results have been used to implement a simple neuromorphic network model of
classical conditioning. The described advantages allow considering
parylene-based organic memristors as prospective devices for hardware
realization of spiking artificial networks capable of supervised and
unsupervised learning. | | Source: | arXiv, 1901.8667 | | Services: | Forum | Review | PDF | Favorites | |
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