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24 April 2024 |
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Article overview
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A New Magnetic Topological Quantum Material Candidate by Design | Xin Gui
; Ivo Pletikosic
; Huibo Cao
; Hung-Ju Tien
; Xitong Xu
; Ruidan Zhong
; Guangqiang Wang
; Tay-Rong Chang
; Shuang Jia
; Tonica Valla
; Weiwei Xie
; Robert J. Cava
; | Date: |
10 Mar 2019 | Abstract: | Magnetism, when combined with an unconventional electronic band structure,
can give rise to forefront electronic properties such as the quantum anomalous
Hall effect, axion electrodynamics, and Majorana fermions. Here we report the
characterization of high-quality crystals of EuSn$_2$P$_2$, a new quantum
material specifically designed to engender unconventional electronic states
plus magnetism. EuSn$_2$P$_2$ has a layered, Bi$_2$Te$_3$-type structure.
Ferromagnetic interactions dominate the Curie-Weiss susceptibility, but a
transition to antiferromagnetic ordering occurs near 30 K. Neutron diffraction
reveals that this is due to two-dimensional ferromagnetic spin alignment within
individual Eu layers and antiferromagnetic alignment between layers - this
magnetic state surrounds the Sn-P layers at low temperatures. The bulk
electrical resistivity is sensitive to the magnetism. Electronic structure
calculations reveal that EuSn$_2$P$_2$ might be a strong topological insulator,
which can be a new magnetic topological quantum material (MTQM) candidate. The
calculations show that surface states should be present, and they are indeed
observed by ARPES measurements. | Source: | arXiv, 1903.3888 | Services: | Forum | Review | PDF | Favorites |
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