|
| | | | |
| | | |
| Stat |
Members: 3644
Articles: 2'499'343
Articles rated: 2609
16 April 2024 |
|
| | | | |
|
Article overview
| |
|
|
Pressure-tuning of the electrical-transport properties in the Weyl semimetal TaP | | M. Besser
; R. D. dos Reis
; F.-R. Fan
; M. O. Ajeesh
; Y. Sun
; M. Schmidt
; C. Felser
; M. Nicklas
; | | Date: |
11 Apr 2019 | | Abstract: | We investigated the pressure evolution of the electrical transport in the
almost compensated Weyl semimetal TaP. In addition, we obtained information on
the modifications of the Fermi-surface topology with pressure from the analysis
of pronounced Shubnikov-de Haas (SdH) quantum oscillations present in the
Hall-effect and magnetoresistance data. The simultaneous analysis of the Hall
and longitudinal conductivity data in a two-band model revealed an only weak
decrease in the electron- and hole charge-carrier densities up to 1.2 GPa,
while the mobilities are essentially pressure independent along the a-direction
of the tetragonal crystal structure. Only weak changes in the SdH frequencies
for B||a and B||c point at a robust Fermi-surface topology. In contrast to the
stability of the Fermi-surface topology and of the density of charge carriers,
our results evidence a strong pressure variation of the magnitude of transverse
magnetoresistance for B||a contrary to the results for B||c. We can relate the
former to an increase in the charge-carrier mobilities along the
crystallographic c-direction. | | Source: | arXiv, 1904.5609 | | Services: | Forum | Review | PDF | Favorites | |
|
|
No review found.
Did you like this article?
Note: answers to reviews or questions about the article must be posted in the forum section.
Authors are not allowed to review their own article. They can use the forum section.
browser claudebot
|
| |
|
|
|
|
News, job offers and information for researchers and scientists:
| |
REGISTER