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19 April 2024

» arxiv » 1905.4839

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Experimental observation of the gate-controlled reversal of the anomalous Hall effect in the intrinsic magnetic topological insulator MnBi2Te4 device
Shuai Zhang ; Rui Wang ; Xuepeng Wang ; Boyuan Wei ; Huaiqiang Wang ; Gang Shi ; Feng Wang ; Bin Jia ; Yiping Ouyang ; Bo Chen ; Qianqian Liu ; Faji Xie ; Fucong Fei ; Minhao Zhang ; Xuefeng Wang ; Di Wu ; Xiangang Wan ; Fengqi Song ; Haijun Zhang ; Baigeng Wang ;
Date:	13 May 2019
Abstract:	Here we report the reserved anomalous Hall effect (AHE) in the 5-septuple-layer van der Waals device of the intrinsic magnetic topological insulator MnBi2Te4. By employing the top/bottom gate, a negative AHE loop gradually decreases to zero and changes to a reversed sign. The reversed AHE exhibits distinct coercive fields and temperature dependence from the previous AHE. It reaches the maximum inside the gap of the Dirac cone. The newly-seen reversed AHE is attributed to the competition of the intrinsic Berry curvature and the Dirac-gap enhanced extrinsic skew scattering. Its gate-controlled switching contributes a scheme for the topological spin field-effect transistors.
Source:	arXiv, 1905.4839
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