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18 April 2024 |
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Article overview
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Dimensional crossover and topological nature of the thin films of a three-dimensional topological insulator by band gap engineering | | Zhenyu Wang
; Tong Zhou
; Tian Jiang
; Hongyi Sun
; Yunyi Zang
; Yan Gong
; Jianghua Zhang
; Mingyu Tong
; Xiangnan Xie
; Qihang Liu
; Chaoyu Chen
; Ke He
; Qi-Kun Xue
; | | Date: |
16 May 2019 | | Abstract: | Identification and control of topological phases in topological thin films
offer great opportunity for fundamental research and the fabrication of
topology-based devices. Here, combining molecular beam epitaxy, angle-resolved
photoemission spectroscopy and ab-initio calculations, we investigate the
electronic structure evolution in (Bi1-xInx)2Se3 films with thickness from 2 to
13 quintuple layers. We identify several phases with their characteristic
topological nature and evolution between them, i.e., dimensional crossover from
a three-dimensional topological insulator with gapless surface state to its
two-dimensional counterpart with gapped surface state, and topological phase
transition from topological insulator to a normal semiconductor with increasing
In concentration x. Furthermore, by introducing In alloying as an external knob
of band gap engineering, we experimentally demonstrated the trivial topological
nature of Bi2Se3 thin films (below 6 quintuple layers) as two-dimensional
gapped systems, in consistent with our theoretical calculations. Our results
provide not only a comprehensive phase diagram of (Bi1-xInx)2Se3 and a route to
control its phase evolution, but also a practical way to experimentally
determine the topological properties of a gapped compound by topological phase
transition and band gap engineering. | | Source: | arXiv, 1905.6776 | | Services: | Forum | Review | PDF | Favorites | |
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