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29 March 2024 |
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Article overview
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An Air-Stable and Atomically Thin Graphene/Gallium Superconducting Heterostructure | Brian Bersch
; Natalie Briggs
; Yuanxi Wang
; Jue Jiang
; Ke Wang
; Chengye Dong
; Shruti Subramanian
; Mingming Fu
; Qiang Zou
; Ya-Wen Chuang
; Zheng Gai
; An-Ping Li
; Jun Zhu
; Cui-Zu Chang
; Vincent H. Crespi
; Joshua A. Robinson
; | Date: |
23 May 2019 | Abstract: | Two-dimensional layered and atomically thin elemental superconductors may be
key ingredients in next-generation quantum technologies, if they can be
stabilized and integrated into heterostructured devices under ambient
conditions. However, atomically thin elemental superconductors are largely
unexplored outside ultra-high vacuum due to rapid oxidation, and even 2D
layered superconductors require complex encapsulation strategies to maintain
material quality. Here we demonstrate environmentally stable, single-crystal,
few-atom-thick superconducting gallium, 2D-Ga, produced by confinement
heteroepitaxy (CHet) at the interface of epitaxial graphene (EG) and silicon
carbide (SiC). 2D-Ga becomes superconducting at 4 K; this elevation over bulk
alpha-Ga (Tc~1 K) is primarily attributed to an increased density of states at
the Fermi level as the incipient Ga-Ga dimerization seen in alpha-Ga is
suppressed by epitaxy to SiC. We also demonstrate the importance of controlling
SiC surface morphology (i.e. step height) and defect-engineering in graphene
layers prior to intercalation to achieve large-area uniform 2D-Ga layers with
isotropic transport properties. This work demonstrates that unique 2D forms of
3D materials can be stabilized at the EG/SiC interface, which represents a
scalable route towards air-stable crystalline 2D superconductors as a potential
foundation for next-generation quantum technologies. | Source: | arXiv, 1905.9938 | Services: | Forum | Review | PDF | Favorites |
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