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29 March 2024
 
  » arxiv » 1905.9938

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An Air-Stable and Atomically Thin Graphene/Gallium Superconducting Heterostructure
Brian Bersch ; Natalie Briggs ; Yuanxi Wang ; Jue Jiang ; Ke Wang ; Chengye Dong ; Shruti Subramanian ; Mingming Fu ; Qiang Zou ; Ya-Wen Chuang ; Zheng Gai ; An-Ping Li ; Jun Zhu ; Cui-Zu Chang ; Vincent H. Crespi ; Joshua A. Robinson ;
Date 23 May 2019
AbstractTwo-dimensional layered and atomically thin elemental superconductors may be key ingredients in next-generation quantum technologies, if they can be stabilized and integrated into heterostructured devices under ambient conditions. However, atomically thin elemental superconductors are largely unexplored outside ultra-high vacuum due to rapid oxidation, and even 2D layered superconductors require complex encapsulation strategies to maintain material quality. Here we demonstrate environmentally stable, single-crystal, few-atom-thick superconducting gallium, 2D-Ga, produced by confinement heteroepitaxy (CHet) at the interface of epitaxial graphene (EG) and silicon carbide (SiC). 2D-Ga becomes superconducting at 4 K; this elevation over bulk alpha-Ga (Tc~1 K) is primarily attributed to an increased density of states at the Fermi level as the incipient Ga-Ga dimerization seen in alpha-Ga is suppressed by epitaxy to SiC. We also demonstrate the importance of controlling SiC surface morphology (i.e. step height) and defect-engineering in graphene layers prior to intercalation to achieve large-area uniform 2D-Ga layers with isotropic transport properties. This work demonstrates that unique 2D forms of 3D materials can be stabilized at the EG/SiC interface, which represents a scalable route towards air-stable crystalline 2D superconductors as a potential foundation for next-generation quantum technologies.
Source arXiv, 1905.9938
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