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Electrical current switching of the noncollinear antiferromagnet Mn$_3$GaN | T. Hajiri
; S. Ishino
; K. Matsuura
; H. Asano
; | Date: |
12 Jul 2019 | Abstract: | We report electrical current switching of noncollinear antiferromagnetic
(AFM) Mn$_3$GaN/Pt bilayers at room temperature. The Hall resistance of these
bilayers can be manipulated by applying a pulse current of
$1.5 imes10^6$~A/cm$^2$, whereas no significant change is observed up to
$sim10^8$~A/cm$^2$ in Mn$_3$GaN single films, indicating that the Pt layer
plays an important role. In comparison with ferrimagnetic Mn$_3$GaN/Pt
bilayers, a lower electrical current switching of noncollinear AFM Mn$_3$GaN is
demonstrated, with a critical current density two orders of magnitude smaller.
Our results highlight that a combination of a noncollinear AFM antiperovskite
nitride and a spin-torque technique is a good platform of AFM spintronics. | Source: | arXiv, 1907.5544 | Services: | Forum | Review | PDF | Favorites |
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