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28 March 2024 |
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Article overview
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The study of intrinsic defect state of FeSe with scanning tunneling microscopy | Kunliang Bu
; Bo Wang
; Wenhao Zhang
; Ying Fei
; Yuan Zheng
; Fangzhou Ai
; Zongxiu Wu
; Qisi Wang
; Hongliang Wo
; Jun Zhao
; Chuanhong Jin
; Yi Yin
; | Date: |
9 Aug 2019 | Abstract: | We apply high resolution scanning tunneling microscopy to study intrinsic
defect states of bulk FeSe. Four types of intrinsic defects including the type
I dumbbell, type II dumbbell, top-layer Se vacancy and inner-layer Se-site
defect are extensively analyzed by scanning tunneling spectroscopy. From
characterized depression and enhancement of density of states measured in a
large energy range, the type I dumbbell and type II dumbbell are determined to
be the Fe vacancy and Se$_mathrm{Fe}$ defect, respectively. The top-layer Se
vacancy and possible inner-layer Se-site vacancy are also determined by
spectroscopy analysis. The determination of defects are compared and largely
confirmed in the annular dark-field scanning transmission electron microscopy
measurement of the exfoliated FeSe. The detailed mapping of defect states in
our experiment lays the foundation for a comparison with complex theoretical
calculations in the future. | Source: | arXiv, 1908.3427 | Services: | Forum | Review | PDF | Favorites |
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