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20 April 2024 |
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Article overview
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Emergence of Quasiparticle in Doped Mott Insulators | Yao Wang
; Yu He
; Krzysztof Wohlfeld
; Makoto Hashimoto
; Edwin W. Huang
; Donghui Lu
; Sung-Kwan Mo
; Seiki Komiya
; Chunjing Jia
; Brian Moritz
; Zhi-Xun Shen
; Thomas P. Devereaux
; | Date: |
20 Sep 2019 | Abstract: | Doping a Mott insulator into a weakly coupled metal remains central to
understanding various correlated emergent phenomena. To interpret this
transition and its connection to the high-$T_c$ cuprates, we study the
evolution of the single-particle spectrum for the Hubbard model using cluster
perturbation theory on superclusters. With extremely low doping, we identify a
heavily renormalized quasiparticle dispersion that immediately develops,
crosses the Fermi level, and coexists with a polaronic band. Its spectral
weight roughly grows at twice the rate of doping in the low doping regime, but
this rate is halved at optimal doping. At the heavily doped regime, we find
both strong electron-hole asymmetry and a vestigial presence of Mott spectral
features. At last, we discuss the scope of single-band Hubbard model in
describing the experimentally measured nodal spectral evolution of ARPES on
La$_{2-x}$Sr$_x$CuO$_4$ ($0 le x le 0.15$). This work benchmarks the
predicting power of the Hubbard model regarding the electronic properties of
cuprates. | Source: | arXiv, 1909.9288 | Services: | Forum | Review | PDF | Favorites |
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