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Ellipsometric detection of transitional surface structures on decapped GaAs(001) | | Andrey V. Vasev
; Sergey I. Chikichev
; | | Date: |
24 Feb 2004 | | Subject: | Materials Science | cond-mat.mtrl-sci | | Affiliation: | Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences), Sergey I. Chikichev (Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences | | Abstract: | Structural and optical properties of MBE-grown GaAs(001) surface have been studied by reflection high-energy electron diffraction and single-wavelength ellipsometry under dynamic conditions of ramp heating after desorption of passivating As-cap-layer with and without As4 beam applied to the surface. For a number metastable reconstruction transitions a clear correlation is stablished between diffraction and optical data. Boundary lines for transitional superstructures are determined as a function of As flux and corresponding activation energies are estimated. For the first time it is shown ellipsometrically that optical response of the surface is drastically different for transitions of the order->order and order->disorder type. | | Source: | arXiv, cond-mat/0402576 | | Services: | Forum | Review | PDF | Favorites | |
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