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Article overview
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Field-Induced Resistive Switching in Metal-Oxide Interfaces | S. Tsui
; A. Baikalov
; J. Cmaidalka
; Y. Y. Sun
; Y. Q. Wang
; Y. Y. Xue
; C. W. Chu
; L. Chen
; A. J. Jacobson
; | Date: |
27 Feb 2004 | Subject: | Superconductivity | cond-mat.supr-con | Affiliation: | 1,2,3), L. Chen , A. J. Jacobson ( Department of Physics and TCSAM, University of Houston, Texas, Lawrence Berkeley National Laboratory, California, Hong Kong University of Science and Technology, Department of Chemistry, University of Houston, Te | Abstract: | We investigate the polarity-dependent field-induced resistive switching phenomenon driven by electric pulses in perovskite oxides. Our data show that the switching is a common occurrence restricted to an interfacial layer between a deposited metal electrode and the oxide. We determine through impedance spectroscopy that the interfacial layer is no thicker than 10 nm and that the switch is accompanied by a small capacitance increase associated with charge accumulation. Based on interfacial I-V characterization and measurement of the temperature dependence of the resistance, we propose that a field-created crystalline defect mechanism, which is controllable for devices, drives the switch. | Source: | arXiv, cond-mat/0402687 | Services: | Forum | Review | PDF | Favorites |
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