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25 April 2024 |
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Article overview
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Coulomb Blockade Effects in a Topological Insulator Grown on a High-Tc Cuprate Superconductor | | Bryan Rachmilowitz
; He Zhao
; Zheng Ren
; Hong Li
; Shang Gao
; John Schneeloch
; Ruidan Zhong
; Genda Gu
; Ilija Zeljkovic
; | | Date: |
3 Jan 2020 | | Abstract: | Using high-Tc superconductors to proximitize topological materials could give
rise to new phenomena with enhanced metrics. However, the evidence for
proximity-induced superconductivity in heterostructures of topological
insulators and high-Tc cuprates has been intensely debated. We use molecular
beam epitaxy to grow ultrathin films of topological insulator Bi2Te3 on a
cuprate Bi2Sr2CaCu2O8+x, and study the surface using low-temperature scanning
tunneling microscopy and spectroscopy. In ~few unit-cell thick Bi2Te3 films, we
find a V-shaped gap-like feature at the Fermi energy in dI/dV spectra. By
reducing the coverage of Bi2Te3 films to create nanoscale islands, we discover
that this spectral feature dramatically evolves into a much larger hard gap,
which can be understood as a Coulomb blockade gap. This conclusion is supported
by the evolution of dI/dV spectra with the lateral size of Bi2Te3 islands, as
well as by topographic measurements that show an additional barrier separating
Bi2Te3 and Bi2Sr2CaCu2O8+x. We conclude that the gap-like feature in dI/dV
spectra in Bi2Te3 films can be explained by Coulomb blockade effects, which
take into account additional resistive and capacitive coupling at the
interface. Our experiments provide a fresh insight into the tunneling
measurements of complex heterostructures with buried interfaces. | | Source: | arXiv, 2001.0906 | | Services: | Forum | Review | PDF | Favorites | |
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