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Current-induced magnetization reversal in a (Ga,Mn)As-based magnetic tunnel junction | | R. Moriya
; K. Hamaya
; A. Oiwa
; H. Munekata
; | | Date: |
28 Apr 2004 | | Subject: | Materials Science; Other | cond-mat.mtrl-sci cond-mat.other | | Abstract: | We report current-induced magnetization reversal in a ferromagnetic semiconductor-based magnetic tunnel junction (Ga,Mn)As/AlAs/(Ga,Mn)As prepared by molecular beam epitaxy on a p-GaAs(001) substrate. A change in magneto-resistance that is asymmetric with respect to the current direction is found with the excitation current of 10^6 A/cm^2. Contributions of both unpolarized and spin-polarized components are examined, and we conclude that the partial magnetization reversal occurs in the (Ga,Mn)As layer of smaller magnetization with the spin-polarized tunneling current of 10^5 A/cm^2. | | Source: | arXiv, cond-mat/0404663 | | Services: | Forum | Review | PDF | Favorites | |
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