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26 April 2024 |
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Spin injection and detection by resonant tunneling structure | | M.M. Glazov
; S.A. Tarasenko
; P.S. Alekseev
; M.A. Odnoblyudov
; V.M. Chistyakov
; I.N. Yassievich
; | | Date: |
8 Jun 2004 | | Subject: | Mesoscopic Systems and Quantum Hall Effect; Materials Science | cond-mat.mes-hall cond-mat.mtrl-sci | | Abstract: | A theory of spin-dependent electron transmission through resonant tunneling diode (RTD) grown of non-centrosymmetrical semiconductor compounds has been presented. It has been shown that RTD can be employed for injection and detection of spin-polarized carriers: (i) electric current flow in the interface plane leads to spin polarization of the transmitted carriers, (ii) transmission of the spin-polarized carriers through the RTD is accompanied by generation of an in-plane electric current. The microscopic origin of the effects is the spin-orbit coupling-induced splitting of the resonant level. | | Source: | arXiv, cond-mat/0406191 | | Services: | Forum | Review | PDF | Favorites | |
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