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25 April 2024
 
  » arxiv » cond-mat/0406584

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Post-growth annealing of GaMnAs under As capping - an alternative way to increase Tc
M. Adell ; V. Stanciu ; J. Kanski ; L. Ilver ; J. Sadowski ; J. Z. Domagala ; P. Svedlindh ; F. Terki ; C. Hernandez ; S. Charar ;
Date 24 Jun 2004
Subject Other | cond-mat.other
Affiliation3 and 4), J. Z. Domagala , P. Svedlindh , F. Terki , C. Hernandez , S. Charar ( Department of Experimental Physics, Chalmers University of Technology, Goteborg, Sweden, Department of Engineering Sciences, Uppsala University, Sweden, MAX-lab, Lund U
AbstractWe demonstrate that in situ post-growth annealing of GaMnAs layers under As capping is adequate for achieving high Curie temperatures (Tc) in a similar way as ex situ annealing in air or in N2 atmosphere practiced earlier.
Source arXiv, cond-mat/0406584
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