|
| | | | |
| | | |
| Stat |
Members: 3645
Articles: 2'504'928
Articles rated: 2609
25 April 2024 |
|
| | | | |
|
Article overview
| |
|
|
Influence of Trapping on the Exciton Dynamics of Al_xGa_1-xAs Films | | A. Amo
; M. D. Martin
; L. Klopotowski
; L. Vina
; A. I. Toropov
; K. S. Zhuravlev
; | | Date: |
5 Jul 2004 | | Subject: | Materials Science | cond-mat.mtrl-sci | | Abstract: | We present a systematic study on the exciton relaxation in high purity AlGaAs epilayers. The time for the excitonic photoluminescence to reach its maximum intensity (t_max) shows a non-monotonic dependence on excitation density which is attributed to a competition between exciton localization and carrier-carrier scattering. A phenomenological four level model fully describes the influence of exciton localization on t_max. This localization effect is enhanced by the increase of the Al content in the alloy and disappears when localization is hindered by rising the lattice temperature above the exciton trapping energy. | | Source: | arXiv, cond-mat/0407102 | | Services: | Forum | Review | PDF | Favorites | |
|
|
No review found.
Did you like this article?
Note: answers to reviews or questions about the article must be posted in the forum section.
Authors are not allowed to review their own article. They can use the forum section.
browser Mozilla/5.0 AppleWebKit/537.36 (KHTML, like Gecko; compatible; ClaudeBot/1.0; +claudebot@anthropic.com)
|
| |
|
|
|
|
News, job offers and information for researchers and scientists:
| |
REGISTER