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25 April 2024

» arxiv » 2005.4359

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Epitaxial Growth and Band Structure of Antiferromagnetic Mott Insulator CeOI
Xinqiang Cai ; Zhilin Xu ; Hui Zhou ; Jun Ren ; Na Li ; Sheng Meng ; Shuai-Hua Ji ; Xi Chen ;
Date:	9 May 2020
Abstract:	The van der Waals material CeOI is predicted to be a layered antiferromagnetic Mott insulator by DFT+U calculation. We successfully grow the CeOI films down to monolayer on graphene/6H-SiC(0001) substrate by using molecular beam epitaxy. Films are studied by {it in-situ} scanning tunneling microscopy and spectroscopy, which shows a band gap of 4.4 eV. A metallic phase with composition unidentified also exists. This rare earth oxyhalide adds a new member to the two-dimensional magnetic materials.
Source:	arXiv, 2005.4359
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